Wide-bandgap power IC R&ε>;D engineer
Academic Degree:
Master's degree or aδ÷÷≥bove, doctoral degree preferred
Recruitment:
10
Job Requirements:
More than 3-5 years, more tha≤λn 5 years is preferred
Work Place:
Hefei
Job Responsibilities:∑α
1. Process simulation parameter ext ×raction, power device simΩ→Ωulation analysis;
2. PCM/TestKey testing and analy≤&≈©sis, sorting out process and device ♦δtest data;
3. Power device spice mode×¥l extraction.
job requirements:
1. Major in semiconductor ♦↑•or microelectronics, master degree←≈& or above;
2. Have a certain unde"♥rstanding of the research and develop÷♦λ×ment of semiconductor integrated cir<€cuits, including basic semiconductor×πλ¶ material knowledge, semiconductor phy₽$ sics, process principles and ↔εdevice theory, understand the w∏πφΩorking principle of power devices a¥≠→σnd the meaning of various p♦≈arameters;
3. Proficiency in using discrete device£✔ test instruments anβΩαd transistor parameter testers λ₩σπto test different device∑ s flexibly;
4. Proficiency in using"®® the operating system, des€∑ign software, process andπφ≠ device simulation software and st✘∞atistical analysis so♠∞§¶ftware used in the p©λ&roduct development pro±✔λcess;
5. Familiar with the devic★≈≥≤e model, can complete the extracti§♠♣on and verification of the device mode≤€l independently;
6. Experience in power device∞↑€ development is preferred.
