Wide-bandgap power IC R&D→↓ engineer
Academic Degree:
Master's degree or above, d♦✔∞octoral degree preferred∏®
Recruitment:
10
Job Requirements:
More than 3-5 years, more♦< than 5 years is preferred
Work Place:
Hefei
Job Responsibilities:
1. Process simulation param×γ<φeter extraction, powe奕r device simulation analysis;
2. PCM/TestKey testing ≈∏♥and analysis, sorting out process♠₩ and device test data;
3. Power device spice model extract∏≠δion.
job requirements:
1. Major in semiconduc• →≥tor or microelectronic£☆ s, master degree or above; ♦"β
2. Have a certain understanding of±σ↕φ the research and development of s₽↔emiconductor integrated circuits, inclu→↑•ding basic semiconductor mate®&rial knowledge, semiconductor ph♣×÷ysics, process principles δ♠×∞and device theory, understand the wΩεorking principle of <₽power devices and the meaning of vari® Ωous parameters;
3. Proficiency in using discrete dev$∞ice test instruments an§✔"d transistor parameteλ♥r testers to test different™♥• devices flexibly;
4. Proficiency in usin₹₩g the operating system, design softw&÷↓are, process and device ≥×®simulation software and s ₩ tatistical analysis software used i₽✘ λn the product development process; ↔
5. Familiar with the≈☆ γ device model, can complete the extractα≠☆ion and verification of≈↑≤≥ the device model independently;αγ γ
6. Experience in power device devel♣αopment is preferred.
